Aluminum nitride (AIN) is a promising addition to silicon carbide--it has high thermal conductivity, a low coefficient of thermal expansion, and high temperature resistance.
View Details
Using density functional theory computations, the structures and electronic properties of hydrogenated and fluorinated aluminium nitride (AlN) were systematically investigated.
View Details
This material is especially promising for use in solar cells due to its tunable direct bandgap energy, which allows optimizing the response of the solar cell to various wavelengths of sunlight.
View Details
In this work, the passivation of highly doped silicon is studied by measuring the emitter saturation current of boron as well as phosphorous emitters. It is shown that hydrogenation is a prerequisite for
View Details
Researchers at ASU have utilized this technique and created a 1-kV-class AlN Schottky barrier diodes. The device consists of a thin n-AlN epilayer as the device active region and thick resistive AlN
View Details
Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the...
View Details
This article provides details on how aluminium nitride is produced, key properties and its applications, including microelectronics.
View Details
Herein, we suggest a novel 2D/2D vdW heterobilayer consisting of silicon carbide (SiC) and aluminum nitride (AlN) as an exciting photocatalyst for solar-to-hydrogen conversion
View Details
In this paper, aluminum nitride (AlN), known for high thermal shock resistance, is introduced as a heat dissipation layer, which reduces the heat accumulation between the perovskite
View DetailsPDF version includes complete article with source references. Suitable for printing and offline reading.
